Semiconductor device

ABSTRACT

In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation&#39;s instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 12/252,241filed Oct. 15, 2008, (now U.S. Pat. No. 7,693,000 issued Apr. 6, 2010)which is a continuation of application Ser. No. 11/174,655 filed Jul. 6,2005 (now U.S. Pat. No. 7,453,738 issued Nov. 18, 2008), which is acontinuation of application Ser. No. 10/188,804 filed Jul. 5, 2002 (nowU.S. Pat. No. 6,954,384 issued Oct. 11, 2005), which is a division ofapplication Ser. No. 10/023,891 filed Dec. 21, 2001 (now U.S. Pat. No.6,424,590 issued Jul. 23, 2002), which is a division of application Ser.No. 09/640,762 filed Aug. 18, 2000 (now U.S. Pat. No. 6,339,552 issuedJan. 15, 2002).

BACKGROUND OF THE INVENTION

The present invention relates to a technique for inputting informationwhich is suitable for use in a semiconductor device supplied with theinformation, e.g., a technique effective for application to a DDR(Double Data Rate)-operable SDRAM (Synchronous Dynamic Random AccessMemory).

With the speeding up of operation, an external interface such as anSDRAM is now migrating toward a small-amplitude signal interface likeSSTL (Stub Series Terminated Transceiver Logic). A differentialamplifier circuit provided with a current mirror load has widely beenadopted for an input buffer of the SSTL specs-based interface. Since athrough current always flows in the differential amplifier circuit in anactive state, the differential amplifier circuit increases powerconsumption as compared with a CMOS input buffer comprising acomplementary type MOS circuit, but is capable of receiving a smallsignal therein at high speed.

In a synchronous memory like the SDRAM, timing provided to operate it iscontrolled based on an external clock signal like an externally suppliedsystem clock signal. This type of synchronous memory has the featurethat the setting of internal operating timings by the use of theexternal clock signal becomes relatively easy and a relativelyhigh-speed operation is made possible.

As the SDRAM used herein, there are known a so-called SDR (Single DataRate) type SDRAM wherein the input and output of data are performed insynchronism with the rising edge of an external clock signal, and aso-called DDR type SDRAM wherein the input and output of data arecarried out in synchronism with both the rising and falling edges of anexternal clock signal.

SUMMARY OF THE INVENTION

The SDR type SDRAM and the DDR type SDRAM are different from each otherin terms of input timing control for writing data. The supply of datafrom the outside in a clock signal cycle identical to that for externalinstructions for a write operation is defined or provided for the SDRtype SDRAM. Since instruction for a write operation by a write commandfollowing a bank active command is provided and simultaneously writedata is supplied, the activation of a data input buffer after thereception of the write command will not suffice for the input of thewrite data supplied in synchronism with the clock signal together withthe write command. Thus, the data input buffer is activated when it hasaccepted a bank active command for providing instructions for theoperation of a row address system.

On the other hand, the supply of data from the outside, synchronizedwith a data strobe signal as viewed from a clock signal cycle subsequentto a clock signal cycle at which external instruction for a writeoperation is provided, is defined or provided for the DDR type SDRAM.The data strobe signal is used even for data output. The use of such adata strobe signal and the proper setting of a delay in propagation ofdata and a delay in propagation of the data strobe signal to eachindividual SDRAM on a memory board relatively facilitate a reduction invariations in distance-dependent time required to access data from amemory controller to each SDRAM on the memory board.

The present inventors have discussed control on the activation of thedata input buffer employed in the DDR type SDRAM. According to theirdiscussions, it has been revealed by the present inventors that when thedata input buffer is activated in response to a bank active command in amanner similar to the SDR type even in the case of the DDR type SDRAM,the data input buffer is subsequently kept in an active state until aprecharge command is accepted, for example, and the data input bufferwastefully consumes or uses up power during a period in which a writecommand is issued after the bank active command. It has also beenrevealed by the present inventors that the write command is notnecessarily issued after the bank active command, and when no writecommand is issued, the activated state of the data input buffer comes tonothing as a consequence and the power consumed by the data input bufferis entirely wasted. The adoption of an SSTL interface for the data inputbuffer of the DDR-SDRAM is defined or provided by JEDEC (Joint ElectronDevice Engineering Council). It has been found out by the presentinventors that if a case which complies with this definition is takeninto consideration, then control timing provided to activate the inputbuffer of the SSTL interface leads to a large element with a view towardachieving low power consumption of the DDR-SDRAM.

An object of the present invention is to provide a semiconductor devicecapable of reducing the consumption of power by an external interfacebuffer such as a data input buffer or the like.

Another object of the present invention is to provide a semiconductordevice suitable for use in a DDR type SDRAM which has planned low powerconsumption.

The above, other objects and novel features of the present inventionwill become apparent from the description of the present specificationand the accompanying drawings.

A summary of a typical one of the embodiments disclosed in the presentapplication will be described in brief below.

In a semiconductor device having a data input buffer capable ofinputting write data to each of memory units, the data input buffer ischanged from an inactive state and an active state after having acceptedinstruction for writing of the data into the memory unit.

Although not restricted in particular, the semiconductor device may be aclock synchronous semiconductor device such as an SDRAM, which performsthe operation of writing data into a plurality of memory cells and theoperation of reading data therefrom in response to a clock signal.

The data input buffer is a differential input buffer having interfacespecs based on an SSTL standard, for example. The corresponding bufferis brought to an active state by the turning on of its power switch andbrought to an inactive state by the turning off thereof. The inputbuffer typified by the differential input buffer allows a throughcurrent to flow in its active state and is capable of immediatelyfollowing even a small change in a small-amplitude input signal andtransferring the input signal to a subsequent stage.

Since such an input buffer is brought to the active state only wheninstruction for the writing of the data into the memory unit is giventhereto, wasteful power consumption that would occur by the data inputbuffer being brought to the active state in advance before theinstruction for the write operation is provided, is avoided.

BRIEF DESCRIPTION OF THE DRAWINGS

While the specification concludes with claims particularly pointing outand distinctly claiming the subject matter which is regarded as theinvention, it is believed that the invention, the aforementioned objectsand features of the invention and further objects, features andadvantages thereof will be better understood from the followingdescription taken in connection with the accompanying drawings in which:

FIG. 1 is a block diagram showing a DDR-SDRAM illustrative of oneexample of a semiconductor device according to the present invention;

FIG. 2 is a circuit diagram illustrating an example of a circuitconfiguration of an SSTL2 (Class II);

FIG. 3 is an explanatory diagram depicting a standard on a signal inSSTL2 (Class II) as an illustrative example;

FIG. 4 is a circuit diagram showing an input first-stage buffer of adata input circuit illustrative of a specific example of a differentialinput buffer based on SSTL;

FIG. 5 is a circuit diagram illustrating a differential input buffersupplied with a data strobe signal DQS as another example of thedifferential input buffer based on the SSTL;

FIG. 6 is a block diagram depicting one example of a data input circuitof a DDR-SDRAM 1;

FIG. 7 is an explanatory diagram schematically showing the manner inwhich selector latch circuits and memory arrays of memory banks areconnected to one another;

FIG. 8 is a block diagram illustrating a preceding stage of a controlcircuit of a DDR-SDRAM with a write control system as a principal body;

FIG. 9 is a block diagram depicting a subsequent stage of the controlcircuit of the DDR-SDRAM with the write control system as the main body;

FIG. 10 is a block diagram showing a column address input system as anillustrative example;

FIG. 11 is a timing chart illustrating write operating timings providedfor a DDR-SDRAM 1 at the number of bursts 4;

FIG. 12 is a timing chart depicting write operating timings provided foran SDR-SDRAM as a comparative example of FIG. 11; and

FIG. 13 is a timing chart showing operating timings at the time that thepresent invention is applied to an address input buffer.

DETAILED DESCRIPTION OF THE INVENTION

In an SDRAM illustrative of a preferred embodiment of a semiconductordevice according to the present invention, a control circuit forcontrolling the operation of writing data into each memory cell and theoperation of reading out data therefrom is operated as follows. A datawrite operation used to specify each of bit lines by a column address isspecified or instructed by a write command. A word line selectingoperation based on a row address is instructed by a bank active command.A data read operation used to specify each bit line by a column addressis instructed by a read command. The initialization of each word line isinstructed by a precharge command. After the reception of the writecommand, the data input buffer is changed from an inactive state to anactive state, and the state of the data input buffer held in theinactive state is rendered invariant even if the bank active command orthe read command is accepted. Thus, since the instructions based on thebank active command and the read command do not activate the data inputbuffer, no wasteful power consumption occurs in the data input buffer ifthe write command is not given at all after the execution of the bankactive command.

When the supply of data, synchronized with a data strobe signal asviewed from a clock signal cycle subsequent to the clock signal cycle atwhich instruction for a write operation based on a write command isprovided, is defined as in the case where the semiconductor deviceaccording to the present invention is a DDR type SDRAM, thesemiconductor device has, for example, a data latch circuit provided ata stage subsequent to the data input buffer. The data latch circuitlatches data supplied in synchronism with the data strobe signal thereinin synchronism with the data strobe signal. Judging from one viewpoint,such data input specs as described above in the semiconductor deviceassure the non-occurrence of a failure to take the input of write dataeven if the data input buffer is activated subsequently to theinstruction for the write operation by the clock-synchronized writecommand.

When the input/output of data is made possible in synchronism with bothrising and falling edges of a data strobe signal synchronized with aclock signal as in the case of the DDR type SDRAM, the data latchcircuit successively latches data inputted to the data input buffer insynchronism with changes of the rising and falling edges of the datastrobe signal, for example, and makes it possible to supply the data tothe memory cells in parallel with one or more cycles of the data strobesignal as units. A data latch circuit illustrative of a furtherspecified form includes a first data latch circuit for latching the datainputted from the data input buffer therein in synchronism with thechange of the rising edge of the data strobe signal, a second data latchcircuit for latching the data inputted from the data input buffertherein in synchronism with the change of the falling edge of the datastrobe signal, and a third data latch circuit for latching the datalatched in the first data latch circuit therein in synchronism with thechange of the falling edge of the data strobe signal. The outputs of thesecond data latch circuit and the third data latch circuit can besupplied to the memory unit while being held in parallel.

Once write data is captured inside from the data input buffer, the datainput buffer is no longer kept in an active state even if the writeoperation is not yet completed. Thus, if low power consumption of thedata input buffer is given top priority, then the data input buffer maybe transitioned from an active state to an inactive state after thelatching of the final write data for a write operation based on a writecommand in the second and third data latch circuits. This control can becarried out in synchronism with the data strobe signal. However, if oneattempts to maintain the reliability of the write operation even whenthe relationship between the data strobe signal and a set-up hold timefor write data is undesirably changed, then the data input buffer may betransitioned from the active state to the inactive state in synchronismwith the completion of the write operation based on the write command.

Input buffer control as viewed from the standpoint similar to the datainput buffer can be applied even to an address input buffer or the like.Now consider, as an example, a semiconductor device including, forexample, a plurality of or plural address input terminals, pluraladdress input buffers provided in association with the plural addressinput terminals, a clock terminal for receiving a clock signal, pluralmemory cells having select terminals electrically connected to theircorresponding word lines and data input/output terminals electricallyconnected to their corresponding bit lines, and a control circuit forcontrolling the operation of writing data into the memory cells and theoperation of reading data therefrom in synchronism with the clocksignal. In this case, the control circuit is operated as follows. A wordline selecting operation based on a row address is specified orinstructed by a bank active command. A data read operation used tospecify each bit line by a column address is instructed by a readcommand. A data write operation used to specify each bit line by acolumn address is instructed by a write command. The initialization ofeach word line is instructed by a precharge command. After the receptionof the bank active command, the read command or the write command, theaddress input buffer is changed from an inactive state to an activestate. Thereafter, the address input buffer may be changed from theactive state to the inactive state after the elapse of a fixed cycleperiod synchronized with the clock signal.

<<Summary of DDR-SDRAM>>

FIG. 1 shows a DDR type SDRAM (DDR-SDRAM) as one example of asemiconductor device according to the present invention. Although notrestricted in particular, the DDR-SDRAM shown in the same drawing isformed over one semiconductor substrate like monocrystalline silicon bythe known MOS semiconductor integrated circuit manufacturing technology.

Although not restricted in particular, the DDR-SDRAM 1 has four memorybanks BNK0 through BNK3. Although not shown in the drawing, therespective memory banks BNK0 through BNK3 respectively have four memorymats although not restricted in particular. The respective memory matscomprise two memory arrays respectively. One of the two memory arrays isassigned to a region or area for storing data in which the leastsignificant bit of a column address signal corresponds to a logicalvalue “0”, whereas the other thereof is assigned to an area for storingdata in which the least significant bit of the column address signalcorresponds to a logical value “1”. A separation or block structure ofthe memory mats and memory arrays for each memory bank is notnecessarily limited to the above. Unless otherwise noted in particularin the present specification, each individual memory bank will thereforebe described as comprising one memory mat respectively.

The memory mats of the respective memory banks BNK0 through BNK3 arerespectively provided with dynamic memory cells MC placed in matrixform. According to the drawing, select terminals of the memory cells MCplaced in the same column are connected to a corresponding one of wordlines WL provided for every column. Further, each of data input/outputterminals of the memory cells placed in the same row is connected to oneof complementary bit lines BL and BL for each row. While only some ofthe word lines WL and the complementary bit lines BL are typicallyillustrated in the same drawing, they are actually placed in largenumbers in matrix form. Each memory mat has a folded bit line structurewith sense amplifiers as the center.

Row decoders RDEC0 through RDEC3, data input/output circuits DIO0through DIO3, and column decoders CDEC0 through CDEC3 are provided forthe respective memory banks BNK0 through BNK3.

Each of the word lines WL in each memory mat is selected according tothe result of decoding of a row address signal by each of the rowdecoders RDEC0 through RDEC3 provided for the respective memory banksBNK0 through BNK3 and driven to a selection level.

The data input/output circuits DIO0 through DIO3 respectively have senseamplifiers, column selection circuits and write amplifiers. The senseamplifier is an amplifier circuit for detecting and amplifying a smallpotential difference developed between the complementary bit lines BLand BL according to the reading of data from each memory cell MC. Thecolumn selection circuit is a switch circuit for selecting thecomplementary bit lines BL and BL and bringing the selected bit line andan input/output bus 2 as a complementary common data line intoconduction. The column selection circuit is selectively activatedaccording to the result of decoding of a column address signal by thecorresponding one of the column decoders CDEC0 through CDEC3. The writeamplifier is a circuit for amplifying the difference in potentialbetween the adjacent complementary bit lines BL and BL through a columnswitch circuit according to write data.

A data input circuit 3 and a data output circuit 4 are connected to theinput/output bus 2. The data input circuit 3 takes write data suppliedfrom outside in a write mode and transfers it to the input/output bus 2.The data output circuit 4 receives read data transferred from eachmemory cell MC to the input/output bus 2 in a read mode and outputs itto the outside. Although not restricted in particular, input terminalsof the data input circuit 3 and output terminals of the data outputcircuit 4 are connected to 16-bit data input/output terminals DQ0through DQ15 respectively. For convenience of description, numeralsdesignated at DQ0 through DQ15 might be described with being assigned todata inputted from and outputted to the outside by the SDRAM 1.

Although not restricted in particular, the DDR-SDRAM 1 has 15-bitaddress input terminals A0 through A14. The address input terminals A0through A14 are connected to an address buffer 5. Of address informationsupplied to the address buffer 5 in multiplex form, row address signalsAX0 through AX12 are supplied to a row address latch 6, column addresssignals AY0 through AY11 are supplied to a column address latch 7, bankselect signals AX13 and AX14 regarded as bank selection signals aresupplied to a bank selector 8, and mode register set information A0through A14 are supplied to a mode register 9, respectively.

Any of the operations of the four memory banks BNK0 through BNK3 isselected by the bank selector 8 according to the logical values of thebank select signals AX13 and AX14. Namely, only the memory bank whoseoperation is selected, is capable of memory operation. For example, thesense amplifiers, the write amplifiers and the column decoders or thelike are not activated for the non-selected memory banks.

The row address signals AX0 through AX12 latched in the row addresslatch 6 are supplied to the row address decoders RDEC0 through RDEC3.

The column address signals AY0 through AY11 latched in the columnaddress latch 7 are preset to a column address counter 10, followed bysupply to the column address decoders CDEC0 through CDEC3. When a burstaccess corresponding to a continuous memory access is specified, thecolumn address counter 10 is incremented by the continuous number oftimes (the number of bursts), whereby column address signals aregenerated thereinside.

A refresh counter 11 is an address counter which itself generates a rowaddress for performing a refresh operation for stored information. Whenthe refresh operation is specified, the corresponding word line WL isselected according to the row address signal outputted from the refreshcounter 11 to thereby refresh the stored information.

Although not restricted in particular, the control circuit 12 issupplied with predetermined information from the mode register 9together with external control signals such as clock signals CLK andCLKb, a clock enable signal CKE, a chip select signal CSb (whose suffixb means that a signal marked with b is a row enable signal or a levelinverse signal), a column address strobe signal CASb, a row addressstrobe signal RASb, a write enable signal WEb, data mask signals DMU andDML, a data strobe signal DQS, etc. The operation of the DDR-SDRAM 1 isdetermined by a command defined according to a combination of the statesof those input signals. The control circuit 12 has control logic forforming or producing internal timing signals corresponding to theoperation specified by the command.

The clock signals CLK and CLKb are defined as master clocks for theSDRAM, and other external input signals are rendered significant insynchronism with the rising edge of the clock signal CLK.

The chip select signal CSb provides instructions for starting a commandinput cycle according to its low level. When the chip select signal isof a high level (chip non-selected state), other inputs are ineffective.However, the state of selection of each memory bank, and internaloperations such as a burst operation, etc. to be described later are notaffected by a change in the chip non-selected state.

Each of the signals RASb, CASb and WEb is different in function from itscorresponding signal in the DRAM and is defined as a signal significantwhen command cycles to be described later are defined.

The clock enable signal CKE is a control signal used in a power downmode and a self refresh mode. In the power down mode (also called a dataretention mode in the SDRAM), the clock enable signal CKE is renderedlow in level.

The data mask signals DMU and DML are mask data represented in byteunits with respect to the input write data. The high level of the datamask signal DMU provides instructions for inhibiting the writing of thewrite data by an upper or high-order byte, whereas the high level of thedata mask signal DML provides instructions for inhibiting the writing ofthe write data by a lower or low-order byte.

The data strobe signal DQS is externally supplied as a write strobesignal upon the write operation. Namely, when the write operation isspecified in synchronism with the clock signal CLK, the supply of datasynchronized with the data strobe signal DQS as viewed from a clocksignal cycle subsequent to the clock signal cycle at which theinstructions for the write operation is provided, is defined. Upon theread operation, the data strobe signal DQS is outputted to the outsideas a read strobe signal. Namely, the data strobe signal changes insynchronism with the external output of the read data upon a data readoperation. To this end, the DLL (Delayed Lock Loop) circuit 13 and theDQS output buffer 14 are provided. The DLL circuit 13 controls orarranges the phase of a clock signal (corresponding to a control clocksignal being in phase with the data strobe signal DQS upon the readoperation) 15 to synchronize the clock signal CLK received by thesemiconductor device 1 with timing provided to output data from the dataoutput circuit 4. Although not restricted in particular, the DLL circuit13 reproduces the internal clock signal 15 capable of compensating for asignal propagation delay time characteristic of an internal circuit byreplica circuit technology and phase lock technology. Thus, the dataoutput circuit 4, which performs an output operation based on theinternal clock signal 15, is capable of outputting data with timingsynchronized with the external clock signal CLK with reliability. TheDQS buffer 14 outputs a data strobe signal DQS to the outside in phasewith the internal clock signal 15.

The row address signals (AX0 through AX12) are respectively defined bylevels at the address input terminals A0 through A12 in a row addressstrobe/bank active command (active command) cycle to be described later,which is synchronized with the rising edge of the clock signal CLK. Inthe active command cycle, the signals AX13 and AX14 inputted from theaddress input terminals A13 and A14 are regarded as the bank selectsignals. When A13=A14=“0”, the bank BNK0 is selected, when A13=“1” andA14=“0”, the bank BNK1 is selected, when A13=“0” and A14=“1”, the bankBNK2 is selected, and when A13=“1” and A14=“1”, the bank BNK3 isselected, respectively. Each memory bank selected in this way isregarded as an object for reading of data by the read command, writingof data by the write command or precharge by the precharge command.

The column address signals (AY0 through AY11) are respectively definedby levels at the terminals A0 through A11 in a column address/readcommand (read command) cycle and a column address/write command (writecommand) cycle to be described later, which are synchronized with therising edge of the clock signal CLK. A column address specified by eachlevel is defined as a start address for burst access.

Although not restricted in particular, the following commands designatedat [1] through [9] and the like are defined for the DDR-SDRAM 1 inadvance.

[1] A mode register set command is a command for setting the moderegister 9. The present command is specified by CSb, RASb, CASb andWEb=low level, and respective data (register set data) to be set aresupplied through A0 through A14. Although not restricted in particular,the respective register set data are defined as a burst length, CASlatency, a burst type, etc. Although not restricted in particular, thesettable burst length takes 2, 4 and 8 clock cycles. The settable CASlatency takes 2 and 2.5 although not restricted in particular.

The CAS latency indicates what cycles of the clock signal CLK are wastedfrom the falling edge of the CASb to the output operation of the dataoutput circuit 4 upon a read operation specified by the columnaddress/read command to be described later. Since an internal operationtime used for the reading of data is required until the read data isestablished or determined, the CAS latency is used to set the internaloperation time according to the use frequency of the clock signal CLK.In other words, when a clock signal CLK of a high frequency is used, theCAS latency is set to a relatively large value. On the other hand, whena clock signal CLK low in frequency is used, the CAS latency is set to arelatively small value.

[2] A row address strobe/bank active command is a command for providinginstructions for a row address strobe and validating the selection ofmemory banks, based on A13 and A14. This command is specified accordingto CSb and RASb=low level (“0”) and CASb and WEb=high level (“1”). Atthis time, addresses supplied to A0 through A12 are captured as rowaddress signals, whereas signals supplied to A13 and A14 are captured assignals for selecting the memory banks. Their capture operations areexecuted in synchronism with the rising edge of the clock signal CLK asdescribed above. When the corresponding command is specified, forexample, a word line in a memory bank specified by the command isselected. Thus, memory cells connected to the corresponding word lineand their corresponding complementary bit lines are brought intoconduction.

[3] A column address/read command is a command required to start a burstread operation. Further, this is also a command for providinginstructions for a column address strobe. The present command isspecified according to CSb and CASb=low level and RASb and WEb=highlevel. Addresses supplied to A0 through A11 at this time are captured ascolumn address signals respectively. Thus, the captured column addresssignals are preset to the column address counter 10 as burst startaddresses. Before the burst read operation specified thereby, a memorybank and a word line lying therein have been selected in the row addressstrobe/bank active command cycle. In this state, memory cells connectedto the selected word line are successively selected in each memory bankin, for example, 32-bit units in accordance with each address signaloutputted from the column address counter 10 in synchronism with theclock signal CLK. Further, items of data therein are sequentiallyoutputted to the outside in 16-bit units in synchronism with the risingand falling edges of the data strobe signal DQS. The number of thesequentially-read data (the number of words) is set as a numberspecified by the above burst length. The data output circuit 4 startsdata reading while waiting for the number of cycles in the clock signalCLK defined by the CAS latency.

[4] A column address/write command is set necessary to start thecorresponding burst write operation when the burst write is set to themode register 9 as a write operation mode. Further, the correspondingcommand provides instructions for a column address strobe at the burstwrite. The corresponding command is specified according to CSb, CASb andWEb=low level and RASb=high level. Addresses supplied to A0 through A11at this time are captured as column address signals. Thus, the capturedcolumn address signals are supplied to the column address counter 10 asburst start addresses upon the burst write. The procedure of the burstwrite operation specified thereby is also performed in a manner similarto the burst read operation. However, no CAS latency is set to the writeoperation and the capturing of the write data is started in synchronismwith the data strobe signal DQS with a delay of one cycle of the clocksignal CLK as seen from the column address/write command cycle.

[5] A precharge command is defined as a command for starting a prechargeoperation on each memory bank selected by A13 and A14. This command isspecified by CSb, RASb and WEb=low level and CASb=high level.

[6] An autorefresh command is a command required to start autorefreshand specified by CSb, RASb and CASb=low level and WEb and CKE=highlevel. A refresh operation defined thereby is similar to CBR refresh.

[7] When a self refresh entry command is set, a self-refresh functionworks during a period in which CKE is low in level. During that period,the refresh operation is automatically performed at predeterminedintervals even if refresh instructions are not provided from outside.

[8] A burst stop command is a command required to stop a burst readoperation. This command is ignored in burst operations. This command isspecified by CASb and WEb=low level and RASb and CASb=high level.

[9] A no-operation command is a command for indicating the non-executionof a substantial operation and specified by CSb=low level and RASb, CASband WEb=high level.

When another memory bank is specified in the course of the burstoperation and the row address strobe/bank active command is suppliedwhen the burst operation is being performed with one memory bank in theDDR-SDRAM 1, the operation of a row address system in another memorybank is made possible without exerting any influence on the operation ofone memory bank being in execution. Namely, a row address systemoperation designated by the bank active command or the like and a columnaddress system operation specified by the column address/write commandor the like can be rendered parallel between the different memory banks.Thus, unless data collide with one another at the data input/outputterminals DQ0 through DQ15, the precharge command and the row addressstrobe/bank active command are issued to a memory bank different from amemory bank to be processed by a process-uncompleted command being inexecution while the command is in execution, thereby making it possibleto start an internal operation in advance.

As is apparent from above description, the DDR-SDRAM 1 makes it possibleto perform data input/output synchronized with both the rising andfalling edges of the data strobe signal DQS synchronized with the clocksignal CLK and input and output addresses and control signals insynchronism with the clock signal CLK. Therefore, a large capacitymemory similar to the DRAM can be operated at high speed equivalent tothat for the SRAM. Accessing several data for the selected one word lineis specified by the burst length, whereby the built-in column addresscounter 10 successively performs switching between selected states ofcolumn systems, thereby making it possible to continuously read or writea plurality of pieces of data.

<<SSTL Interface>>

In the DDR-SDRAM 1, although not restricted in particular, interfacesfor an input buffer supplied with the clock signal CLK, inverse clocksignal CLKb, clock enable signal CKE, chip select signal CSb, RAS signalRASb, CAS signal CASb, write enable signal WEb, address input signals A0through A14, data mask signal DM, and data strobe signal DQS, a datainput buffer of the data input circuit 3, and a data output buffer ofthe data output circuit 4 comply with, for example, the known SSTL2(Class II) standard.

FIG. 2 shows an example of a circuit configuration of an SSTL2 (ClassII). A transmission line 20 having a characteristic impedance of 50Ω ispulled up by a reference voltage VREF and thereby electrically connectedto, for example, a memory controller or an SDRAM or the like. An inputbuffer of the SDRAM is configured as a differential input buffer 21. Thetransmission line 20 is connected to one of the differential inputsthereof, whereas the reference voltage VREF is applied to the otherthereof. A power switch 22 is activated and controlled based on anenable signal DIE. A source voltage VDD is set to 3.3 V, for example,and a ground voltage VSS in the circuit is set to 0V. An output bufferis provided, at an output stage, with a CMOS inverter with a sourcevoltage VDDQ=2.5V and the ground voltage VSS as operating sources orsupplies. The memory controller has a driver and a receiver both ofwhich satisfy the interface specs. The driver drives the transmissionline 20 and the receiver receives data from the transmission line 20.

FIG. 3 shows a standard on a signal in the SSTL2 (Class II) as anillustrative example. In the SSTL2 standard, a level of 1.6 volts ormore, which is higher than the reference voltage (VREF) like 1.25 voltsby 0.35V or higher, is regarded as an H level. A level lower than thereference potential or voltage by 0.35V or less, i.e., a level of 0.90Vor less is regarded as an L level. The above specific levels aretypified by way of example and may be levels which comply with an SSTL3standard, for example.

FIG. 4 shows an input first-stage buffer of the data input circuit 3 asa specific example of the differential input buffer based on the SSTL.The differential input buffer 30 has a differential amplifier circuitwhich comprises a current mirror load comprised of p channel MOStransistors Mp1 and Mp2, n channel differential input MOS transistorsMn3 and Mn4 electrically connected the drains of the MOS transistors Mp1and Mp2, and an n channel power switch MOS transistor Mn5 electricallyconnected to the common sources of the differential input MOStransistors Mn3 and Mn4.

The gate of one differential input MOS transistor Mn3 is electricallyconnected to a data terminal DQj (where j=0 to 15), and the gate of theother differential input MOS transistor Mn4 is electrically connected toa reference voltage VREF. An output node of the differential amplifiercircuit can selectively be precharged to a source voltage VDD by a pchannel precharge MOS transistor Mp6. A signal at the node is invertedthrough an inverter 31 and outputted therefrom.

A signal DIE is an enable control signal for the differential inputbuffer 30, and is supplied to the gates of the power switch MOStransistor Mn5 and the precharge MOS transistor Mp6. The differentialinput buffer is activated by a high level of the enable control signalDIE. In its activated state, an operating current flows in thedifferential amplifier circuit, whereby the differential amplifiercircuit immediately amplifies a small potential difference between thereference voltage VREF and the level of a signal at the terminal DQjwith the reference voltage VREF as the center. The operation ofinputting the signal from the terminal DQj is carried out at high speedbecause of the differential amplification. The differential input bufferis deactivated by a low level of the enable control signal DIE. In thedeactivated state of the differential input buffer, no power consumptionis developed in the differential amplifier circuit, and the output ofthe inverter 31 is also forcibly brought to a low level by the action ofthe precharge MOS transistor Mp6 kept in an on state.

The enable control signal DIE is asserted from a low to a high levelafter the instruction for the write operation by the write command isgiven to the DDR-SDRAM 1. Thus, since the differential input buffer 30is activated after the instruction for the write operation by the writecommand, it does not consume or use up power wastefully before theinstruction for the write operation. Further, even if the bank activecommand or read command is accepted, the state of the data input bufferkept in the deactivated state remains unchanged. Since the differentialinput buffer 30 is not activated under the instructions based on thebank active command or read command, the differential input buffer 30does not perform any wasteful power consumption if the write command isnot given at all after the bank active command.

FIG. 5 shows a differential input buffer supplied with the data strobesignal DQS as another example of the differential input buffer based theSSTL. The differential input buffer 40 comprises a pair of differentialamplifier circuits whose input terminals different in polarity from eachother are connected to each other. Namely, one differential amplifiercircuit thereof comprises a current mirror load comprised of p channelMOS transistors Mp11 and Mp12, n channel differential input MOStransistors Mn13 and Mn14, and an n channel power switch MOS transistorMn15. The gate of the MOS transistor Mn13 serves as an inversion inputterminal, and the gate of the MOS transistor Mn14 serves as anon-inversion input terminal. The other differential amplifier circuitcomprises a current mirror load comprised of p channel MOS transistorsMp21 and Mp22, n channel differential input MOS transistors Mn23 andM24, and an n channel power switch MOS transistor Mn25. The gate of theMOS transistor Mn23 serves as an inversion input terminal, and the gateof the MOS transistor Mn24 serves as a non-inversion input terminal.

The data strobe signal DQS is inputted to the gates of the differentialinput MOS transistors Mn13 and Mn24. A reference voltage VREF isinputted to the gates of the differential input MOS transistors Mn14 andMn23. Thus, internal clock signals DSCLKT and DSCLKB havingcomplementary levels with respect to the data strobe signal DQS areobtained from CMOS inverters 41 and 42 respectively connected to outputnodes corresponding to single ends of the differential amplifiercircuits.

A signal DSEN is an enable control signal for the differential inputbuffer 40, which is supplied to the gates of the power switch MOStransistors Mn15 and Mn25. The differential input buffer is activated bya high level of the enable control signal DSEN. In its activated state,an operating current flows in each differential amplifier circuit, sothat the differential amplifier circuit immediately amplifies a smallpotential difference between the reference voltage VREF and the level ofa signal at the terminal DQS with the reference voltage VREF as thecenter. The operation of inputting the signal from the terminal DQS iscarried out at high speed because of the differential amplification. Thedifferential input buffer is deactivated by a low level of the enablecontrol signal DSEN. In the deactivated state of the differential inputbuffer, no power consumption is developed in the differential amplifiercircuits.

<<Data Input Circuit>>

FIG. 6 shows one example of the data input circuit 3 in the DDR-SDRAM 1.The differential input buffer 30 of the SSTL specs described in FIG. 4is disposed at a first stage. The differential input buffer 30 inputs orreceives write data supplied in synchronism with the rising and fallingedges of a data strobe signal DQS therein. At a stage subsequent to thedifferential input buffer 30, a latch circuit 50 is provided whichparallelizes data supplied in units of half cycles of the data strobesignal in one cycle units of the data strobe signal and latches the sametherein. The latch circuit 50 includes, for example, a first data latch50A for latching output data of the differential input buffer 30 insynchronism with a change of the rising edge of the data strobe signal,a second data latch 50B for latching the output data of the differentialinput buffer 30 in synchronism with a change of the falling edge of thedata strobe signal, and a third data latch 50C for latching output dataof the first data latch 50A in synchronism with the change in thefalling edge of the data strobe signal. Each of the data latches 50Athrough 50C comprises a master/slave type latch (MSFF). In the datalatch 50A, DSCLKT and DSCLKB are respectively set as a latch lock for amaster stage and a latch lock for a slave stage. In the data latches 50Band 50C, DSCLKB is set as the latch lock for the master stage and DSCLKTis set as the latch lock for the slave stage. The latch locks DSCLKT andDSCLKB are signals varied in synchronism with the data strobe signalDQS.

Parallel output data DINRj and DINFj of the latch circuit 50 arerespectively supplied to selector latches 51 and 52. Each of theselector latches 51 and 52 selects either one of the parallel outputdata DINRj and DINFj according to the value of a signal DICY0 andlatches the selected data therein in synchronism with a clock signalDICLK. The signal DICY0 is a signal corresponding to a logical value ofthe least significant bit AY0 of the column address signals (burst writeleading or head addresses) supplied to the column address latch 7 fromthe outside. The selector latch 51 selects DINRj when DICY0 (=AY0)=0.When DICY0 (=AY0)=1, the selector latch 51 selects DINFj. Control on theselection of the selector latch 52 is opposite to the above. Thus, datain which the logical value of the least significant bit is “0”, and datain which the logical value is “1” are respectively latched in theselector latches 51 and 52 regardless of the logical value of the leastsignificant bit of the column addresses for the firstly-input writedata.

The output of the selector latch 51 is connected to its correspondingmemory array of each memory bank assigned to a data storage areacorresponding to data in which the least significant bit of the columnaddress signals is a logical value “0”, through a signal line DINBY0Bjincluded in the input/output bus 2. The output of the selector latch 52is connected to its corresponding memory array of each memory bankassigned to a data storage area corresponding to data in which the leastsignificant bit of the column address signals is a logical value “1”,through a signal line DINBY0Tj included in the input/output bus 2.

FIG. 7 schematically shows the manner in which selector latches andmemory arrays of memory banks are connected to one another. In FIG. 7,one memory mat MAT is illustrated for each memory bank by way ofexample. A memory array Y0B of each memory mat MAT is used for storingdata in which the logical value of the least significant bit of thecolumn addresses is “0”, whereas a memory array Y0T thereof is used forstoring data in which the logical value of the least significant bit ofthe column addresses is “1”. WAmp indicates write amplifiers providedfor each of the memory arrays and are included in their correspondingdata input/output circuits DIO0 through DIO3. YI0WY0T0 through YI0WY0T3and YI0WY0B0 through YI0WY0B3 are respectively activation controlsignals for the write amplifiers WAmp.

In the DDR-SDRAM 1 as is understood from the description of the datainput circuit 3, the data is inputted from outside in synchronism withboth the rising and falling edges of the data strobe signal DQSsynchronized with the clock signal CLK. However, the internal writeoperation of the DDR-SDRAM 1 is carried out with the period or cycle ofthe clock signal CLK as the minimum unit. While a detailed descriptionis omitted in particular, the same relation is established betweeninternal operation timings of the SDRAM and output operation timingsthereof provided for the outside even as to a data read operation.

<<Control Circuit of DDR-SDRAM>>

FIG. 8 shows a detailed example of a preceding stage of the controlcircuit 12 in the DDR-SDRAM with a write control system as a main body,and FIG. 9 illustrates a detailed example of a subsequent stage of thecontrol circuit 12 in a manner similar to FIG. 8, respectively.

Each of a clock input buffer 60, a command-system input buffer 61, and aDQS input buffer 40 is a differential input buffer of the SSTL specs.The DQS input buffer 40 is configured as shown in FIG. 5 by way ofexample. The CLK input buffer 60 has a differential amplifier circuitwith CLK and CLKb as differential inputs, as a differential inputbuffer. The CLK input buffer 60 is activated by turning-on of anoperating source or supply and deactivated in response to instructionsfor a power down mode. The command-system input buffer 61 is configuredin a manner similar to the differential input buffer shown in FIG. 4 butactivated by turning-on of the operating source and deactivated inresponse to the instructions for the power down mode.

An output produced from the CLK input buffer 60 is supplied to aone-shot pulse generator 62, from which various internal clock signalsACLKB, BCLKB, CCLKB and DCLKB are generated.

Various signals CSb, RASb, CASb and WEb inputted to the command-systeminput buffer 61 are decoded by a command decode circuit 63 from whichinternal control signals corresponding to the above operation modes aregenerated. ACTi is a control signal for activating each bank selected bya bank select signal when an instruction for bank active operation isprovided by a bank active command. A suffix i thereof means a banknumber. The suffix i thereof means that other signals are also similarto the above. WT and WTY are activated in response to instructions for awrite operation by a write command. WTY is faster than WT in activationtiming. A signal WTL2 is a signal obtained by delaying the signal WT bya shift register circuit 64A. RD is activated when a read operation isspecified by a read command. PREi is a control signal for activating thecorresponding bank selected by the bank select signal when aninstruction for precharge is provided by the precharge command.

RWWi is a column selection-system reference control signal at the timethat the instruction for the write operation is provided, and is definedas a signal set for each memory bank. Because column selection timing isset after the elapse of two clock cycles since the instruction for thewrite command upon the write operation, the signal RWWi is delayed by ashift register circuit 64B, and a one-shot pulse signal RWi synchronizedwith the internal clock signal BCLKB is outputted from a one-shot pulsegenerator 64C, based on the delayed signal RWW2 i.

The results of decoding by the command decode circuit 63 are reflectedon various flags (RSFF) of a mode state circuit 66 shown in FIG. 9. Eachflag comprises a set/reset type flip-flop. S indicates a set terminaland R indicates a reset terminal. BAi (where i=0 to 3) indicate memorybanks each indicative of an active state. BEND is a signal indicative ofthe end or completion of a burst operation. BBi is a signal indicativeof a burst write operation being in execution. Signals BWTY, BDRY andBBYi are respectively signals latched in synchronism with the clocksignal BCLKB. A write pulse generator 67 generates signals YI0WY0T0through YI0WY0T3 and YI0WY0B0 through YI0WY0B3 for the memory arraysaccording to banks, based on the column state signal BBYi generatedbased on the signal BBi. A write clock DICLK is a signal latched insynchronism with the clock signal DCLKB, based on a signal RWWSTOR.

FIG. 10 is a block diagram of a column address input system. An addressbuffer 5 corresponds to the differential input buffer of the SSTL specs.While the address buffer 5 is configured in a manner similar to thedifferential input buffer shown in FIG. 4, it is activated by turning-onof an operating supply and deactivated in response to instructions for apower down mode. A column address latch 7 has a master/slave type latch70, a shift register circuit 71, and a multiplexer 72. Because thewriting of data into each memory cell is done after the elapse of twocycles of a clock signal CLK since instruction for a write operation bya write command, an address signal delayed by the shift register circuit71 is selected by the multiplexer 72 when the instruction for the writeoperation is provided. When instruction for a read operation isprovided, the multiplexer 72 directly selects the output of the latch70. The column address counter 10 performs an increment operation insynchronism with YCLK. When each address outputted from the columnaddress counter 10 reaches the number of bursts with respect to a burststart address preset to the latch 70, a burst end detector 73 outputs aburst end signal BEND.

The column address input system has a start address latch 74 distinctfrom the latch 70, which holds the least significant bit AY0 of thecolumn addresses. A select signal DICY0 corresponding to a logical valueof a signal CAY0W held by the start address latch 74 is generated by aone-shot pulse generator 75 in synchronism with the clock signal DICLK.

Operation of the control circuit 12 for data writing will now beexplained. When the instruction for the write operation by the writecommand is provided and the signal WTY is changed in pulse, the signalWTY is latched in a latch 65A in synchronism with the clock BCLKB, andthe enable signal DIE of the data input buffer 30 is output high inlevel. Thereafter, the write data supplied in synchronism with the datastrobe signal DQS is inputted to the latch circuit 50 in synchronismwith the signals DSCLKT and DSCLKB outputted from the input buffer 40 asshown in FIG. 8 by way of example. A timing signal DICLK for controllingselecting operations and latch operations of the selector latches 51 and52 (see FIG. 6) supplied with the data outputted in parallel from thelatch circuit 50 is generated by a write system decode circuit 65B shownin FIG. 9. A column clock signal YCLK for controlling addresses forwriting data supplied from the selector latches 51 and 52 to theinput/output bus 2 in synchronism with the timing signal DICLK isoutputted from a decode logic 65C in the command decode circuit 63 shownin FIG. 8. The write data is written into each column address insynchronism with the column clock signal YCLK. The end or completion ofaddress counting of the write data corresponding to the number of burstsis detected by the burst end detector 73 shown in FIG. 10, where a burstend signal BEND is changed in pulse. The pulse change shows a state inwhich the generation of the final write column address for burst writingis determined, and is equivalent to the end of the write operation fromthe viewpoint of a column address-system operation. A signal BWToutputted from the mode state circuit 66 shown in FIG. 9 is negated insynchronism with this change. The latch 65A, which receives the signalBWT therein, negates the enable signal DIE of the data input buffer 30.Thus, the power switch MOS transistor Mn5 of the differential inputbuffer 30 is brought to an off state to deactivate the differentialinput buffer 30.

<<Write Operating Timing of DDR-SDRAM>>

FIG. 11 illustrates write operating timings provided for the DDR-SDRAM 1at the number of bursts 4.

At a time t0, a row address strobe/bank active command (bank activecommand Active) is issued in synchronism with a clock signal CLK, and arow address signal (X-Add) is supplied. A signal ACTi for each selectedmemory bank is changed in pulse by the bank active command. Hence asignal BAi is asserted. Thus, although not shown in the drawing inparticular, each word line corresponding to the row address signal isselected in the selected memory bank. Further, information stored ineach memory cell whose select terminal is connected to the correspondingword line, is read into respective complementary bit lines, after whichthe information is amplified by a sense amplifier.

At a time t1, a column address/write command (Write) is issued insynchronism with the clock signal CLK and thereby a column addresssignal (Y-Add) is supplied. Signals WTY, WT and RWWi are successivelychanged in pulse according to the column address/write command. Thus, anenable control signal DIE for the differential input buffer 30 is outputhigh in level (time t2). As a result, the differential input buffer 30is brought from an inactive state to an active state.

At this time, a data strobe signal DQS is changed to rise within a rangeof an allowable error of ±0.25Tck with respect to the rising edge of thenext clock signal CLK at a time t1. For example, write data D1, D2, D3and D4 are supplied in synchronism with respective changes in rising andfalling edges of DQS. Tck indicates the cycle of the clock signal.

When the write data D1 is supplied, the differential input buffer 30 isalready activated. Thus, the successively-supplied data D1 through D4are inputted to the latch circuit 50 in synchronism with signals DSCLKTand DSCLKB outputted from the input buffer 40. The latch circuit 50outputs D1 and D2 in parallel therefrom at a time t3, and outputs D3 andD4 in parallel therefrom at a time t4. A decision as to the selection ofinput of the parallel-outputted data by the selector latches 51 and 52(see FIG. 6) is performed according to the logical value of a signalDICY0 in synchronism with the first change (time t2 a) in timing signalDICLK. The write data are supplied from the selector latches 51 and 52to the input/output bus 2 (DINBY0Bj, DINBY0Tj) according to the resultof decision in synchronism with the subsequent changes (times t3 a andt4 a) in timing signal DICLK.

The writing of the write data supplied to the input/output bus 2 intoeach memory cell is carried out after the time t3 a. A column addresssignal CAa for writing the data D1 and D2 is outputted from the columnaddress counter 10 in synchronism with a column clock signal YCLK (timet3 b). A column address signal CAa for writing the data D3 and D4 isoutputted from the column address counter 10 in synchronism with a pulsechange subsequent to the column clock signal YCLK (time t4 b). Thus, thedata D1 and D2, and D3 and D4 are written into predetermined memorycells.

The end or completion of address counting of the write datacorresponding to the number of bursts is detected by the burst enddetector 73, where a burst end signal BEND is changed in pulse at a timet5. The pulse change shows a state in which the generation of the finalwrite column address for burst writing is determined, and is equivalentto the end or completion of the write operation from the viewpoint of acolumn address-system operation. A signal BWT outputted from the modestate circuit 66 shown in FIG. 9 is negated in synchronism with thischange. The latch 65A, which receives the signal BWT therein, negatesthe enable signal DIE of the data input buffer 30. As a result, thedifferential input buffer 30 is brought into an inactive state.

FIG. 12 shows write operating timings provided for an SDR-SDRAM as acomparative example of FIG. 11. The SDR-SDRAM is supplied with writedata together with a column address/write command in synchronism with aclock signal CLK. Therefore, the activation of a data input buffer afterinstruction for a write operation by a write command will not suffice.To this end, an enable signal DIOFF for the data input buffer is outputlow in level in synchronism with instruction (pulse change in signalACTi) for a row address system operation by a bank active command,whereby the data input buffer is activated. This condition is maintaineduntil a precharge operation is next specified by a precharge command(Pre) (until pulse change in signal PREi). Thus, since the operation ofthe data input buffer is unnecessary until writing based on the writecommand is indicated after a bank active operation, until the prechargeoperation is specified after the completion of the write operation, andwhen only a read command is issued and no write command is issued afterthe bank active operation, the data input buffer is being kept activeduring that time, thereby causing wasteful power consumption. If suchcontrol on the activation of the data input buffer is applied to theDDR-SDRAM 1 as it is, power is expected to be wastefully consumedcompared with the DDR-SDRAM 1 shown in FIG. 1 because of SSTL interfacespecs of the data input buffer.

FIG. 13 is an operation timing chart at the time that the presentinvention is applied to an address input buffer. An example shown inFIG. 13 is one which supposes or considers the specs that address inputtiming for the DDR-SDRAM shown in FIG. 1 is delayed by one cycle of aclock signal CLK as counted from the input of a command. Namely, asillustrated in FIG. 13 by way of example, timing for row address strobeis provided with a delay of one cycle of the clock signal CLK after abank active command (Active) and thereby a row address signal (X-Add) issupplied. Timing for column address strobe is provided with a delay ofone cycle of the clock signal CLK after a column address/write command(Write) and thereby a column address signal (Y-Add) is supplied. Anactivation control signal AIE for the address input buffer is output insynchronism with a pulse change in signal ACTi by bank activeinstructions, a pulse change in signal WT by instructions for a writeoperation by a write command, and a pulse change in read signal byinstructions for a read operation by a column address/read commandalthough not shown in the drawing, respectively, thereby activating theaddress input buffer. The deactivation of the address input buffer maybe performed while waiting for timing provided to complete an addressinput operation by the address input buffer. For example, it may besynchronized with a predetermined change in column system clock signalCCLKB.

If control for activating the address input buffer is effected thereonafter the execution of instructions for operation, then power consumedby the address input buffer of the SSTL specs can be reduced.

While the invention made by the present inventors has been describedabove specifically by the embodiments, the present invention is notnecessarily limited to the same. It is needless to say that variouschanges can be made to the invention within the range not departing fromthe substance thereof.

For example, the input buffer activated and controlled after theexecution of the instructions for operation, is not limited to the dataand address input buffers. It may be other control signal input buffers.Further, the SSTL specs-based input buffers are not limited to thedifferential input buffers described in FIGS. 4 and 5 and may suitablybe changed. Further, control logic for generating an enable controlsignal DIE for a data input buffer or logic for generating anintermediate signal for producing it is not limited to the above and maysuitably be changed. The number of data input/output terminals for theSDRAM is not limited to 16 bits and may be set to 8 bits, 4 bits or thelike. The number of the memory banks for the SDRAM, and theconfigurations of the memory mat and memory array in each memory bankare not limited to the above and may suitably be changed.

The above description has been made of the case in which the inventionprincipally made by the present inventors has been applied to theDDR-SDRAM which corresponds to a field defined as the background of theinvention. However, the present invention is not limited to it. TheDDR-SDRAM can widely be applied to a semiconductor device called anon-chip microcomputer, a system LSI or an accelerator or the like, forexample.

Advantageous effects obtained by typical implementations of theinvention in the present application will be described in brief asfollows.

Namely, in a semiconductor device having a data input buffer capable ofinputting write data to each of memory units, the data input buffer ischanged from an inactive state to an active state after having acceptedinstruction for writing of the data into the memory unit. The data inputbuffer is a differential input buffer having interface specs based on anSSTL standard, for example. The differential input buffer allows athrough current to flow in its active state and receives a signal whileimmediately following a small change in a small-amplitude signal. Sincesuch an input buffer is brought to an active state only when instructionfor the writing of the data into the memory unit is given thereto,wasteful power consumption that would occur by the data input bufferbeing brought to the active state in advance before the instruction forthe write operation is provided, can be avoided.

In the case of an SDRAM indicative of a preferred embodiment of thesemiconductor device, instruction provided by a bank active command or aread command does not activate a data input buffer. Therefore, if awrite command is not provided after a bank active operation, then thedata input buffer causes no wasteful power consumption.

Control of an input buffer as judged from the viewpoint similar to thedata input buffer can be applied even to an address input buffer, etc.After the reception of the bank active command, the read command or thewrite command, the address input buffer is changed from an inactivestate to an active state. Thereafter, the address input buffer ischanged from the active state to the inactive state after the elapse ofa predetermined cycle period synchronized with the clock signal.

From the above, a semiconductor device can be provided which is capableof reducing power consumption made by an external interface buffer suchas a data input buffer or the like.

1. A clock synchronous semiconductor device, comprising: a data terminalwhich receives data; an input buffer having a differential amplifiercoupled to said data terminal; and a plurality of memory cells, each ofwhich is necessary to refresh, wherein, in a time period from a writecommand issuing to a next command issuing, said differential amplifieris changed from an active state to an inactive state.
 2. A clocksynchronous semiconductor device according to claim 1, wherein, in thetime period from said write command issuing to said next commandissuing, said differential amplifier is changed from said active stateto said inactive state after write data are written to the memory cells.3. A clock synchronous semiconductor device which activates inaccordance with a command, comprising: a data terminal which receivesdata; an input buffer having a differential amplifier coupled to saiddata terminal; and a plurality of memory cells, each of which isnecessary to refresh, wherein after a predetermined number of cycleshave passed from issuing of a write command, said differential amplifieris changed from an active state to an inactive state, so that a powerconsumption of said differential amplifier is reduced.
 4. A clocksynchronous semiconductor device which activates in accordance with acommand, comprising: a data terminal which receives data; an inputbuffer having a differential amplifier coupled to said data terminal;and a plurality of memory cells, each of which is necessary to refresh,wherein, after a predetermined number of cycles have passed from issuingof a write command, said differential amplifier is changed from a firststate to a second state, and wherein a through current of saiddifferential amplifier in said first state is larger than a throughcurrent of said differential amplifier in said second state.
 5. A clocksynchronous semiconductor device which activates in accordance with acommand, comprising: a data terminal which receives data; an inputbuffer having a differential amplifier coupled to said data terminal;and a plurality of memory cells, each of which is necessary to refresh,wherein, in a time period from a write command issuing to a next commandissuing, after a predetermined number of cycles have passed from saidwrite command issuing, said differential amplifier is changed from afirst state to a second state, wherein a through current of saiddifferential amplifier in said first state is larger than a throughcurrent of said differential amplifier in said second state.
 6. A clocksynchronous semiconductor device which activates in accordance with acommand, comprising: a data terminal which receives data; an inputbuffer having a differential amplifier coupled to said data terminal;and a plurality of memory cells, each of which is necessary to refresh,wherein, in a time period from a write command issuing to a next commandissuing, after write data are written to the memory cells, saiddifferential amplifier is changed from a first state to a second state,and wherein a through current of said differential amplifier in saidfirst state is larger than a through current of said differentialamplifier in said second state.
 7. A clock synchronous semiconductordevice which activates in accordance with a command, comprising: aterminal which receives a signal; an input buffer having a differentialamplifier coupled to said terminal; and a plurality of memory cells,wherein, during an active operation mode, in a time period from a firstcommand issuing to a next command issuing, said differential amplifieris changed from a first state to a second state, wherein a throughcurrent of said differential amplifier in said first state is largerthan a through current of said differential amplifier in said secondstate.
 8. A clock synchronous semiconductor device according to claim 7,wherein each of said plurality of memory cells is necessary to berefreshed.
 9. A clock synchronous semiconductor device which activatesin accordance with a command, comprising: a terminal which receives asignal; an input buffer having a differential amplifier coupled to saidterminal; and a plurality of memory cells, wherein, in a time periodfrom a first command issuing to a next command issuing, saiddifferential amplifier is changed from a first state to a second state,wherein a through current of said differential amplifier in said firststate is larger than a through current of said differential amplifier insaid second state, wherein said first command is a write command, andwherein, before said write command, an activate command is issued.